Fabrication of Copc and PTCDI-Ph Based low -operating voltage organic field-effect Transistors

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dc.contributor.author Gedda, Murali
dc.date.accessioned 2015-09-23T07:01:57Z
dc.date.available 2015-09-23T07:01:57Z
dc.date.issued 2015
dc.identifier.other ROLL NO. 10612101
dc.identifier.uri http://gyan.iitg.ernet.in/handle/123456789/533
dc.description Supervisor: Dipak Kumar Goswami en_US
dc.description.abstract Organic field-effect transistors (OFETs) based on organic semiconductors have attracted much interest as possible inexpensive and flexible alternatives to inorganic devices [1-3]. Despite considerable improvement in device properties, a better understanding of the growth of the active channel and the control over the growth can significantly enhance the charge transport through the device and reduce the operating voltage. en_US
dc.language.iso en en_US
dc.relation.ispartofseries TH-1322;
dc.subject PHYSICS en_US
dc.title Fabrication of Copc and PTCDI-Ph Based low -operating voltage organic field-effect Transistors en_US
dc.type Thesis en_US


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