Fabrication of Copc and PTCDI-Ph Based low -operating voltage organic field-effect Transistors

Gedda, Murali

dc.contributor.author	Gedda, Murali
dc.date.accessioned	2015-09-23T07:01:57Z
dc.date.available	2015-09-23T07:01:57Z
dc.date.issued	2015
dc.identifier.other	ROLL NO. 10612101
dc.identifier.uri	http://gyan.iitg.ernet.in/handle/123456789/533
dc.description	Supervisor: Dipak Kumar Goswami	en_US
dc.description.abstract	Organic field-effect transistors (OFETs) based on organic semiconductors have attracted much interest as possible inexpensive and flexible alternatives to inorganic devices [1-3]. Despite considerable improvement in device properties, a better understanding of the growth of the active channel and the control over the growth can significantly enhance the charge transport through the device and reduce the operating voltage.	en_US
dc.language.iso	en	en_US
dc.relation.ispartofseries	TH-1322;
dc.subject	PHYSICS	en_US
dc.title	Fabrication of Copc and PTCDI-Ph Based low -operating voltage organic field-effect Transistors	en_US
dc.type	Thesis	en_US